FDS4685 数据手册
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FDS4685 5 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDS4685
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W
- Total Gate Charge (Qg@Vgs): 27nC@5V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 1872pF@20V
- Continuous Drain Current (Id): 8.2A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@10V,8.2A
- Package: SOP-8
- Manufacturer: onsemi
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1872pF @ 20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Base Part Number: FDS46
- detail: P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC